Patent · US Active

Hybrid III-V silicon laser formed by direct bonding

US8620164B2 · kind B2 · utility

204Cited by

2References

18Claims

0Family size

Assignee

Intel Corporation · US

Inventors

John Heck · Berkeley, US
Hanan Bar · Jerusalem, IL
Richard Jones · San Mateo, US
Hyundai Park · Goleta, US

Key dates

Filing date	Jan 20, 2011
Grant date	Dec 31, 2013
Priority date	—
Expiry date	Feb 3, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/2205
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.