Plasma processing apparatus
US8623171B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2009 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Oct 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32623
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.