Christopher J. Leavitt
16Patents
4h-index
20Co-inventors
56Inventor score
Filing activity: Apr 3, 2009 → Mar 5, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8698107B2 | Technique and apparatus for monitoring ion mass, energy, and angle in processing systems | Electricity | 22 | Active |
| US8354655B2 | Method and system for controlling critical dimension and roughness in resist features | Electricity | 5 | Active |
| US8623171B2 | Plasma processing apparatus | Electricity | 5 | Active |
| US9711316B2 | Method of cleaning an extraction electrode assembly using pulsed biasing | Electricity | 4 | Active |
| US8461554B1 | Apparatus and method for charge neutralization during processing of a workpiece | Electricity | 3 | Active |
| US9034743B2 | Method for implant productivity enhancement | Electricity | 3 | Active |
| US9865430B2 | Boron implanting using a co-gas | Electricity | 2 | Active |
| US9677171B2 | Method of improving ion beam quality in a non-mass-analyzed ion implantation system | Electricity | 2 | Active |
| US9840772B2 | Method of improving ion beam quality in a non-mass-analyzed ion implantation system | Electricity | 2 | Active |
| US8907307B2 | Apparatus and method for maskless patterned implantation | Electricity | 1 | Active |
| US8669538B1 | Method of improving ion beam quality in an implant system | Electricity | 1 | Active |
| US10290466B2 | Boron implanting using a co-gas | Electricity | 1 | Active |
| US8698109B2 | Method and system for controlling critical dimension and roughness in resist features | Electricity | 0 | Active |
| US11120973B2 | Plasma processing apparatus and techniques | Electricity | 0 | Active |
| US11615945B2 | Plasma processing apparatus and techniques | Electricity | 0 | Active |
| US12165852B2 | Cover ring to mitigate carbon contamination in plasma doping chamber | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.