Manufacturing techniques to limit damage on workpiece with varying topographies
US8623229B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2011 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Nov 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments relate to a method for processing a workpiece. In the method, a first photoresist layer is provided over the workpiece, wherein the first photoresist layer has a first photoresist tone. The first photoresist layer is patterned to provide a first opening exposing a first portion of the workpiece. A second photoresist layer is then provided over the patterned first photoresist layer, wherein the second photoresist layer has a second photoresist tone opposite the first photoresist tone. The second photoresist layer is then patterned to provide a second opening that at least partially overlaps the first opening to define a coincidentally exposed workpiece region. A treatment is then performed on the coincidentally exposed workpiece region. Other embodiments are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.