Method for etching an ultra thin film
US8623231B2 · kind B2 · utility
0Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2008 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | May 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.