Method of manufacturing a light emitting diode
US8623685B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 22, 2011 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Nov 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a light emitting diode is disclosed. In one aspect, the light emitting diode has a carrier, an active layer structure of III-nitride type materials, and a photonic crystal structure of III-nitride type materials. The active layer structure includes a first active layer with an n-type doped layer and a p-type doped layer and suitably a quantum well structure. The photonic crystal structure includes periodically distributed trenches or periodically distributed pillars spaced by one or more trenches. The photonic crystal structure includes an overgrowth layer within which a diameter of a trench gradually increases, and a directional photonic crystal layer in which the diameter of a trench is substantially constant. The diode may be formed in a method wherein the directional photonic crystal layer is provided on a three-dimensional pattern that exposes selected areas of the first surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.