Method to selectively grow phase change material inside a via hole
US8623734B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2011 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Dec 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An example embodiment is a method for filling a via hole with phase change material. The method steps include forming a bottom electrode in a substrate, depositing a dielectric layer above the bottom electrode, and forming a via hole within the dielectric layer down to a top surface of the bottom electrode. The substrate is heated to a reaction temperature and a first phase change material precursor is deposited within the via hole. The first precursor is configured to decompose on the top surface of the bottom electrode and chemisorb on a top surface of the dielectric layer at the reaction temperature. A second precursor is deposited within the via hole after the first precursor at least partially decomposes on the top surface of the bottom electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.