Inventor · Taipei, TW

Chieh-Fang Chen

35Patents
8h-index
40Co-inventors
71Inventor score

Filing activity: Feb 23, 2006 → Aug 9, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8138028B2 Method for manufacturing a phase change memory device with pillar bottom electrode Electricity 21 Active
US7879645B2 Fill-in etching free pore device Electricity 21 Active
US7884343B2 Phase change memory cell with filled sidewall memory element and method for fabricating the same Electricity 14 Active
US8324605B2 Dielectric mesh isolated phase change structure for phase change memory Electricity 14 Active
US7701750B2 Phase change device having two or more substantial amorphous regions in high resistance state Electricity 14 Active
US8363463B2 Phase change memory having one or more non-constant doping profiles Physics 13 Active
US8426242B2 Composite target sputtering for forming doped phase change materials Electricity 11 Active
US7932507B2 Current constricting phase change memory element structure Electricity 10 Active
US8772747B2 Composite target sputtering for forming doped phase change materials Electricity 8 Active
US7745807B2 Current constricting phase change memory element structure Electricity 8 Active
US7510929B2 Method for making memory cell device Electricity 7 Active
US8378328B2 Phase change memory random access device using single-element phase change material Physics 4 Active
US7491573B1 Phase change materials for applications that require fast switching and high endurance Electricity 4 Active
US8779408B2 Phase change memory cell structure Electricity 3 Active
US8064247B2 Rewritable memory device based on segregation/re-absorption Physics 3 Active
US9330764B2 Array fanout pass transistor structure Electricity 3 Active
US8198619B2 Phase change memory cell structure Electricity 3 Active
US7514367B2 Method for manufacturing a narrow structure on an integrated circuit Emerging Cross-Sectional Technologies 3 Active
US8445313B2 Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process Electricity 2 Active
US7897954B2 Dielectric-sandwiched pillar memory device Physics 2 Active
US8623734B2 Method to selectively grow phase change material inside a via hole Electricity 2 Active
US10811427B1 Semiconductor structure and manufacturing method thereof Electricity 2 Active
US8263960B2 Phase change memory cell with filled sidewall memory element and method for fabricating the same Electricity 1 Active
US8273598B2 Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process Electricity 1 Active
US7483316B2 Method and apparatus for refreshing programmable resistive memory Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.