Method of manufacturing semiconductor device using acid diffusion
US8623739B2 · kind B2 · utility
4Cited by
1References
5Claims
0Family size
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Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Sep 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.