Patent · US Active

Semiconductor device and a method for making the semiconductor device

US8623762B2 · kind B2 · utility

2Cited by

10References

6Claims

0Family size

Assignee

AMS AG · AT

Inventors

Jochen Kraft · Bruck an der Mur, AT
Franz Schrank · Graz, AT

Key dates

Filing date	Nov 18, 2009
Grant date	Jan 7, 2014
Priority date	—
Expiry date	Apr 29, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An opening (9) is made in the substrate (1) over a terminal pad (7). A dielectric layer (10), a metallization (11), a compensation layer (13) and a passivation layer (15) are deposited so that the passivation layer is separated from the metallization by the compensation layer at least within the opening. A material that is suitable for reducing a mechanical stress between the metallization and the passivation layer is chosen for the compensation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.