Non-volatile memory structure and method for fabricating the same
US8624218B2 · kind B2 · utility
7Cited by
2References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 2, 2012 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Jan 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The disclosure provides a non-volatile memory structure and a method for fabricating the same. The non-volatile memory structure includes a first contact connected to a first transistor. A second contact is connected to a second transistor. A resistance-changing memory material pattern covers and contacts the second contact but not the first contact. A top electrode contacts both the resistance-changing memory material pattern and the first contact. An area of the resistance-changing memory material pattern is substantially larger than an area of its interface with the second contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.