Non-polar semiconductor light emission devices

US8624292B2 · kind B2 · utility

Assignee

• SiPhoton Inc. · US

Inventors

• Shaoher X. Pan · Palo Alto, US
• Jay Chen · Houston, US
• Justin Payne · San Jose, US
• Michael Heuken · Aachen, DE

Key dates

• Filing date: Jun 8, 2011
• Grant date: Jan 7, 2014
• Expiry date: Apr 3, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/81

Abstract

A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.