Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate
US8624356B2 · kind B2 · utility
1Cited by
2References
6Claims
0Family size
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Key dates
| Filing date | Mar 30, 2009 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Oct 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A group III nitride semiconductor substrate production method includes preparing a bulk crystal formed of a group III nitride semiconductor single crystal. The group III nitride semiconductor single crystal has one crystalline plane and an other crystalline plane. Hardness of the other crystalline plane is smaller than hardness of the one crystalline plane. The prepared bulk crystal is cut from the other crystalline plane to the one crystalline plane of the bulk crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.