Defect evaluation method for semiconductor
US8625085B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2012 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Jul 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Even in the case of a sample exhibiting low photoresponse, such as a wide bandgap semiconductor, a measurement method which enables highly accurate CPM measurement is provided. When CPM measurement is performed, photoexcited carriers which are generated by light irradiation of a sample exhibiting low photoresponse such as a wide bandgap semiconductor are instantly removed by application of positive bias voltage to a third electrode which is provided in the sample in addition to two electrodes used for measurement. When the photoexcited carriers are removed, even in the case of the sample exhibiting low photoresponse, the controllability of a photocurrent value is improved and CPM measurement can be performed accurately.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.