Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them
US8625340B1 · kind B1 · utility
3Cited by
3References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 29, 2011 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Dec 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.