Array structural design of Magnetoresistive Random Access Memory (MRAM) bit cells
US8625341B2 · kind B2 · utility
1Cited by
1References
34Claims
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Key dates
| Filing date | Apr 17, 2012 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Apr 17, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/933
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) bit cells are disclosed. The bit cells include a source line formed in a first plane and a bit line formed in a second plane. The bit line has a longitudinal axis that is parallel to a longitudinal axis of the source line, and the source line overlaps at least a portion of the bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.