William Xia
11Patents
3h-index
12Co-inventors
53Inventor score
Filing activity: Jun 8, 2001 → Sep 17, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8159870B2 | Array structural design of magnetoresistive random access memory (MRAM) bit cells | Emerging Cross-Sectional Technologies | 17 | Active |
| US9773741B1 | Bondable device including a hydrophilic layer | Electricity | 11 | Active |
| US8264052B2 | Symmetric STT-MRAM bit cell design | Electricity | 4 | Active |
| US8085581B2 | STT-MRAM bit cell having a rectangular bottom electrode plate and improved bottom electrode plate width and interconnect metal widths | Electricity | 3 | Active |
| US9970826B2 | Bipolar junction transistor voltage-drop-based temperature sensors | Physics | 2 | Active |
| US9799824B2 | STT-MRAM design enhanced by switching current induced magnetic field | Electricity | 1 | Active |
| US8625341B2 | Array structural design of Magnetoresistive Random Access Memory (MRAM) bit cells | Emerging Cross-Sectional Technologies | 1 | Active |
| US8094486B2 | Pad design with buffers for STT-MRAM or other short pulse signal transmission | Emerging Cross-Sectional Technologies | 1 | Active |
| US9385305B2 | STT-MRAM design enhanced by switching current induced magnetic field | Electricity | 0 | Active |
| US6573735B2 | Reliability of vias and diagnosis by e-beam probing | Physics | 0 | Expired |
| US10578497B2 | Diode-based temperature sensor | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.