Local self-boosting method of flash memory device and program method using the same
US8625357B2 · kind B2 · utility
7Cited by
4References
14Claims
0Family size
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Key dates
| Filing date | Nov 2, 2010 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Oct 8, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a local self-boosting method of a flash memory device including at least one string having memory cells respectively connected to wordlines. The local self-boosting method includes forming a potential well at a channel of the string and forming potential walls at the potential well to be disposed at both sides of a channel of a selected one of the memory cells. The channel of the selected memory cell is locally limited by the potential walls and boosted when a program voltage is applied to the selected memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.