Plasma etching method
US8628676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2011 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | May 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.