Chemically amplified resist composition and patterning process
US8628908B2 · kind B2 · utility
2Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Feb 28, 2012 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Feb 28, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/11
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.