Annealing methods for backside illumination image sensor chips
US8628998B2 · kind B2 · utility
2Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | May 22, 2012 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | May 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.