Forming a protective film on a back side of a silicon wafer in a III-V family fabrication process
US8629037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2011 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Jan 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of fabricating a semiconductor device. The method includes forming a first dielectric layer over a first surface and a second surface of a silicon substrate. the first and second surfaces being opposite surfaces. A first portion of the first dielectric layer covers the first surface of the substrate, and a second portion of the first dielectric layer covers the second surface of the substrate. The method includes forming openings that extend into the substrate from the first surface. The method includes filling the openings with a second dielectric layer. The method includes removing the first portion of the first dielectric layer without removing the second portion of the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.