Method for manufacturing semiconductor device
US8629041B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 21, 2011 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Jul 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include die bonding to bond a semiconductor element to a first position of a base member via a bonding layer provided on one surface of the semiconductor element. The method can include wire bonding to connect a terminal formed on the semiconductor element to a terminal formed on the base member by a bonding wire. In addition, the method can include sealing to seal the semiconductor element and the bonding wire. Viscosity of the bonding layer in the bonding is controlled not to exceed the viscosity of the bonding layer in the sealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.