Topological insulator-based field-effect transistor

US8629427B2 · kind B2 · utility

Assignee

• THE TEXAS A&M UNIVERSITY · US

Inventors

• Sanjay Banerjee · Austin, US
• Leonard Franklin Register, II · Austin, US
• Allan MacDonald · Austin, US
• Bhagawan Sahu · Watervliet, US
• Priyamvada Jadaun · Austin, US
• Jiwon Chang · Seoul, KR

Key dates

• Filing date: Apr 29, 2011
• Grant date: Jan 14, 2014
• Expiry date: Feb 18, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N99/03

Abstract

A Topological INsulator-based field-effect transistor (TINFET) is disclosed. The TINFET includes a first and second gate dielectric layers separated by a topological insulator (TI) layer. A first gate contact is connected to the first gate dielectric layer on the surface that is opposite the TI layer. A second gate contact may be connected to the second gate dielectric layer on the surface that is opposite the TI layer. A first TI surface contact is connected to one surface of the TI layer, and a second TI surface contact is connected to the second surface of the TI layer.