Patent · US Active

Light-emitting diodes on concave texture substrate

US8629465B2 · kind B2 · utility

17Cited by
4References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 25, 2012
Grant dateJan 14, 2014
Priority date
Expiry dateJan 25, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/819

Abstract

A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.