Patent · US Active

Method for electron beam induced etching of layers contaminated with gallium

US8632687B2 · kind B2 · utility

14Cited by

26References

24Claims

0Family size

Assignee

Carl Zeiss SMS Ltd. · IL

Inventors

Nicole Auth · Gustavsburg, DE
Petra Spies · Mainz, DE
Rainer Becker · Pfungstadt, DE
Thorsten Hofmann · Rodgau, DE
Klaus Edinger · Lorsch, DE

Key dates

Filing date	Aug 11, 2009
Grant date	Jan 21, 2014
Priority date	—
Expiry date	Feb 18, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32136
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for electron beam induced etching of a layer contaminated with gallium, with the method steps of providing at least one first halogenated compound as an etching gas at the position at which an electron beam impacts on the layer, and providing at least one second halogenated compound as a precursor gas for removing of the gallium from this position.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.