Interface treatment method for germanium-based device
US8632691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2012 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Jun 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/306
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is an interface treatment method for germanium-based device, which belongs to the field of manufacturing technologies of ultra large scaled integrated (ULSI) circuits. In the method, the natural oxide layer on the surface of the germanium-based substrate is removed by using a concentrated hydrochloric acid solution having a mass percentage concentration of 15%˜36%, and dangling bonds of the surface are performed a passivation treatment by using a diluted hydrochloric acid solution having a mass percentage concentration of 5%˜10% so as to form a stable passivation layer on the surface. This method makes a good foundation for depositing a high-K (high dielectric constant) gate dielectric on the surface of the germanium-based substrate after cleaning and passivating, enhances quality of the interface between the gate dielectric and the substrate, and improves the electrical performance of germanium-based MOS device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.