Methods of forming a memory cell having programmable material that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion
US8633084B1 · kind B1 · utility
2Cited by
3References
35Claims
0Family size
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Key dates
| Filing date | Oct 17, 2012 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Oct 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.