Method of manufacturing GaN-based semiconductor device
US8633087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2012 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Mar 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a GaN-based semiconductor device includes the steps of: preparing a composite substrate including: a support substrate having a thermal expansion coefficient at a ratio of not less than 0.8 and not more than 1.2 relative to a thermal expansion coefficient of GaN; and a GaN layer bonded to the support substrate, using an ion implantation separation method; growing at least one GaN-based semiconductor layer on the GaN layer of the composite substrate; and removing the support substrate of the composite substrate by dissolving the support substrate. Thus, the method of manufacturing a GaN-based semiconductor device is provided by which GaN-based semiconductor devices having excellent characteristics can be manufactured at a high yield ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.