Multilevel resistive memory having large storage capacity
US8633465B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2012 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Feb 8, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0007
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a multilevel resistive memory having large storage capacity, which belongs to a field of a fabrication technology of a resistive memory. The resistive memory includes an top electrode and a bottom electrode, and a combination of a plurality of switching layers and defective layers interposed between the top electrode and the bottom electrode, wherein, the top electrode and the bottom electrode are respectively contacted with a switching layer (a film such as Ta2O5, TiO2, HfO2), and the defective layers (metal film such as Ti, Au, Ag) are interposed between the switching layers. By using the present invention, a storage capacity of a resistive memory can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.