Gengyu Yang
4Patents
1h-index
17Co-inventors
41Inventor score
Filing activity: Mar 7, 2011 → Jul 9, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8564031B2 | High voltage-resistant lateral double-diffused transistor based on nanowire device | Electricity | 8 | Active |
| US8633465B2 | Multilevel resistive memory having large storage capacity | Physics | 1 | Active |
| US8526242B2 | Flash memory and fabrication method and operation method for the same | Electricity | 0 | Active |
| US11848555B2 | Method and system for evaluating stability of HVDC receiving end system, and storage medium | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.