Group III nitride semiconductor device, production method therefor, power converter
US8633519B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 20, 2010 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Feb 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is an HEMT exhibiting a normally-off characteristic and low on-state resistance, which includes a first carrier transport layer; two separate second carrier transport layers formed of undoped GaN and provided on two separate regions of the first carrier transport layer; and carrier supply layers formed of AlGaN and respectively provided on the two separate second carrier transport layers. The second carrier transport layers and the carrier supply layers are respectively formed through crystal growth on the first carrier transport layer. The heterojunction interface between the second carrier transport layer and the carrier supply layer exhibits high flatness, and virtually no growth-associated impurities are incorporated in the vicinity of the heterojunction interface. Therefore, reduction in mobility of 2DEG is prevented, and on-state resistance is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.