Programmable integrated circuit with thin-oxide passgates
US8633731B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2011 |
| Grant date | Jan 21, 2014 |
| Priority date | — |
| Expiry date | Oct 10, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/419
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Integrated circuits such as programmable integrated circuits may have configuration random-access memory elements. The configuration random-access memory elements may be loaded with configuration data to customize programmable circuitry on the integrated circuits. Each memory element may have a bistable element that is powered using a positive power supply voltage and a negative power supply voltage. Programmable transistors in the programmable circuitry may have gates coupled to outputs of the bistable elements. The programmable transistors may have gate insulators that are thinner than gate insulators in the transistors of the bistable elements and may have threshold voltages of about zero volts. During operation, some of the configuration random-access memory elements may supply negative voltages to their associated programmable transistors so that the programmable transistors are provided with gate-source voltages of less than zero volts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.