In-situ removal of semiconductor process residues from dry pump surfaces
US8636019B2 · kind B2 · utility
0Cited by
10References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 22, 2008 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Mar 17, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4412
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to vacuum processing systems in which process gases are introduced in a process chamber and are exhausted through a vacuum processing system exhaust path. Deposits made by the exhausted gases in one or more dry vacuum pumps are removed by introducing hydrofluoric acid upstream of the dry pump while the processing chamber is idle. The hydrofluoric acid is introduced upstream of the dry pump through a nozzle in the foreline or at the inlet to the dry pump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.