Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system
US8637117B2 · kind B2 · utility
2Cited by
26References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 14, 2010 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Feb 11, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45544
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems and methods for ALD thin film deposition include a mechanism for removing excess non-chemisorbed precursors from the surface of a substrate in a translation-based process involving multiple separate precursor zones. Excess precursor removal mechanisms according to the present disclosure may introduce localized high temperature conditions, high energy conditions, or azeotropes of the excess precursor, to liberate the excess precursor before it reaches a separate precursor zone, thereby inhibiting CVD deposition from occurring without causing heat-induced degradation of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.