Oxygen radical generation for radical-enhanced thin film deposition
US8637123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2010 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Mar 6, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/545
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of radical-enhanced atomic layer deposition (REALD) involves alternating exposure of a substrate to a first precursor gas and to radicals, such as monatomic oxygen radicals (O.), generated from an oxygen-containing second precursor gas, while maintaining spatial or temporal separation of the radicals and the first precursor gas. Simplified reactor designs and process control are possible when the first and second precursor gases are nonreactive under normal processing conditions and can therefore be allowed to mix after the radicals recombine or otherwise abate. In some embodiments, the second precursor gas is an oxygen-containing compound, such as carbon dioxide (CO2) or nitrous oxide (N2O) for example, or a mixture of such oxygen-containing compounds, and does not contain significant amounts of normal oxygen (O2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.