Fin-last replacement metal gate FinFET process
US8637359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2011 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Nov 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
FinFET devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a FET device includes the following steps. A wafer is provided having an active layer on an insulator. A plurality of fin hardmasks are patterned on the active layer. A dummy gate is placed over a central portion of the fin hardmasks. One or more doping agents are implanted into source and drain regions of the device. A dielectric filler layer is deposited around the dummy gate. The dummy gate is removed to form a trench in the dielectric filler layer. The fin hardmasks are used to etch a plurality of fins in the active layer within the trench. The doping agents are activated. A replacement gate is formed in the trench, wherein the step of activating the doping agents is performed before the step of forming the replacement gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.