Method for manufacturing an integrated power device having gate structures within trenches

US8637369B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Angelo Magri · Mascalucia, IT
• Antonino Alessandria · Catania, IT
• Stefania Fortuna
• Leonardo Fragapane · Catania, IT

Key dates

• Filing date: Mar 1, 2012
• Grant date: Jan 28, 2014
• Expiry date: Mar 1, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/664

Abstract

An embodiment of a method for manufacturing a power device with conductive gate structures inside etched trenches. Such trenches include sidewalls and a bottom, wherein covering the sidewalls and the bottom of the trench is a first insulating coating layer. In the formation of the conductive gate structure, openings within the first material in the trench are made such that a conductive central region of a second conductive material having a different resistivity than the first conductive material are able to be electrically coupled together through a plurality of conductive bridges between said second conductive coating layer and said conductive central region.