Semiconductor device with mini SONOS cell
US8637916B2 · kind B2 · utility
2Cited by
3References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 12, 2010 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Jul 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with mini silicon-oxide-nitride-oxide-silicon (mini-SONOS) cell is disclosed. The semiconductor device includes: a semiconductor substrate; a shallow trench isolation (STI) embedded in the semiconductor substrate; a logic device partially overlapping the STI; and a SONOS cell formed in the overlapped region of the logic device and the STI.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.