Semiconductor devices and methods of forming the same
US8637927B2 · kind B2 · utility
6Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2011 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Nov 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.