Metal gate transistor with resistor
US8637936B2 · kind B2 · utility
4Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2009 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Jul 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/474
Abstract
A resistor is disclosed. The resistor is disposed on a substrate, in which the resistor includes: a dielectric layer disposed on the substrate; a polysilicon structure disposed on the dielectric layer; two primary resistance structures disposed on the dielectric layer and at two ends of the polysilicon structure; and a plurality of secondary resistance structures disposed on the dielectric layer and interlaced with the polysilicon structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.