Memory element and memory apparatus
US8637947B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2012 |
| Grant date | Jan 28, 2014 |
| Priority date | — |
| Expiry date | Nov 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory element includes a layered structure and a negative thermal expansion material layer. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a magnetic layer having a positive magnetostriction constant. The magnetization direction is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.