N-dopant for carbon nanotubes and graphene
US8642432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2011 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Jul 23, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/846
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene to produce a stable n-doped nano-component, wherein dihydrotetraazapentacene is represented by the formula:wherein in the dihydrotetraazapentacene chemical structure, each of R1, R2, R3, and R4 can be hydrogen, an alkyl group of C1 to C16 carbons, an alkoxy group, an alkylthio group, a trialkylsilane group, a hydroxymethyl group, a carboxylic acid group or a carboxylic ester group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.