Bhupesh Chandra
20Patents
9h-index
21Co-inventors
71Inventor score
Filing activity: Sep 1, 2010 → Oct 2, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8772141B2 | Doping carbon nanotubes and graphene for improving electronic mobility | Electricity | 21 | Active |
| US9177688B2 | Carbon nanotube-graphene hybrid transparent conductor and field effect transistor | Emerging Cross-Sectional Technologies | 17 | Active |
| US8895417B2 | Reducing contact resistance for field-effect transistor devices | Electricity | 16 | Active |
| US9162883B2 | Doped carbon nanotubes and transparent conducting films containing the same | Emerging Cross-Sectional Technologies | 12 | Active |
| US8642432B2 | N-dopant for carbon nanotubes and graphene | Emerging Cross-Sectional Technologies | 11 | Active |
| US9017813B2 | Doped carbon nanotubes and transparent conducting films containing the same | Emerging Cross-Sectional Technologies | 10 | Active |
| US8772910B2 | Doping carbon nanotubes and graphene for improving electronic mobility | Electricity | 10 | Active |
| US9105853B2 | N-dopant for carbon nanotubes and graphene | Emerging Cross-Sectional Technologies | 10 | Active |
| US8912525B2 | Chemical oxidation of graphene and carbon nanotubes using Cerium (IV) ammonium nitrate | Chemistry; Metallurgy | 10 | Active |
| US8940595B2 | Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels | Electricity | 8 | Active |
| US9887361B2 | Methods for forming a carbon nanotube-graphene hybrid film on a substrate | Emerging Cross-Sectional Technologies | 5 | Active |
| US9287399B2 | Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels | Electricity | 4 | Active |
| US9663369B2 | Cerium (IV) salts as effective dopant for carbon nanotubes and graphene | Electricity | 1 | Active |
| US9722045B2 | Buffer layer for modulating Vt across devices | Electricity | 0 | Active |
| US9324475B2 | Doped carbon nanotubes and transparent conducting films containing the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US9954175B2 | Carbon nanotube-graphene hybrid transparent conductor and field effect transistor | Emerging Cross-Sectional Technologies | 0 | Active |
| US10566537B2 | Carbon nanotube-graphene hybrid transparent conductor and field effect transistor | Emerging Cross-Sectional Technologies | 0 | Active |
| US11671066B2 | Manufacturing method for an artificially oriented piezoelectric film for integrated filters | Emerging Cross-Sectional Technologies | 0 | Active |
| US9953873B2 | Methods of modulating the morphology of epitaxial semiconductor material | Electricity | 0 | Active |
| US10483943B2 | Artificially oriented piezoelectric film for integrated filters | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.