Low temperature junction growth using hot-wire chemical vapor deposition
US8642450B2 · kind B2 · utility
0Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2007 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Jan 22, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.