Semiconductor structure and method for manufacturing the same
US8642471B2 · kind B2 · utility
8Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2011 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Feb 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for manufacturing a semiconductor structure. The method can effectively reduce the contact resistance between source/drain regions and a contact layer by forming two contact layers of different thickness on the surfaces of the source/drain regions. Further, the present invention provides a semiconductor structure, which has reduced the contact resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.