Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
US8642526B2 · kind B2 · utility
3Cited by
42References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2011 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Jan 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.