Memory Cell
US8642985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2011 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Nov 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes a memory element, a current-limiting element electrically coupled to the memory element, and a high-selection-ratio element electrically coupled to the current-limiting element. The memory element is configured to store data as a resistance state. The current-limiting element is a voltage-controlled resistor (VCR) having a resistance that decreases when a voltage applied thereto increases. The high-selection-ratio element has a first resistance that is small when a voltage applied to the memory cell is approximately equal to a selection voltage of the memory cell, and has a second resistance that is substantially larger than the first resistance when the voltage applied to the memory cell is approximately equal to one-half of the selection voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.