Integrated circuit having microelectromechanical system device and method of fabricating the same
US8642986B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2009 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | May 11, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00238
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the logic circuit region of the substrate. The metal interconnect, formed by a plurality of levels of wires and a plurality of vias, is located above the substrate to connect the MOS device. The MEMS device is located on the MEMS region, and includes a sandwich membrane located between any two neighboring levels of wires in the metal interconnect and connected to the metal interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.