Non-volatile memory device and method for fabricating the same
US8643076B2 · kind B2 · utility
8Cited by
0References
13Claims
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Key dates
| Filing date | Nov 25, 2011 |
| Grant date | Feb 4, 2014 |
| Priority date | — |
| Expiry date | Jan 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
A non-volatile memory device includes a substrate including a cell region and a peripheral circuit region, a first insulation layer formed over the substrate to cover the peripheral circuit region thereof, and interlayer dielectric patterns and first conductive patterns alternately formed over the substrate of the cell region. Each of the interlayer dielectric patterns and the first conductive patterns includes a horizontal part extending along a surface of the substrate and a vertical part extending along a sidewall of the first insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.